Mesoporous fibrous silicon nitride by catalytic nitridation of silicon

MICROSTRUCTURAL STUDY OF SILICON NITRIDE WHISKERS PRODUCED BY NITRIDATION OF PLASMA-SPRAYED SILICON LAYERS

plasma-sprayed silicon layers have been used to produce silicon nitride layers with fibrous microstructure which optimizes fracture toughness and strength. SEM examination of the specimens shows that the surface is covered by fine needles and whiskers of Si3N4.In order to study the oxygen contamination effect as well as other contaminants introduced during spraying and nitridation processes, su...

Catalytic Effects of Cr on Nitridation of Silicon and Formation of One-dimensional Silicon Nitride Nanostructure

The catalytic effects of chromium (Cr) on the direct nitridation of silicon (Si) and morphology of nitridation product were investigated. Cr dramatically improved the conversation of Si to silicon nitride (Si3N4). The complete conversion was achieved at 1350 °C upon addition of 1.25 wt% Cr. This temperature was much lower than that required in the case without using a catalyst. Meanwhile, Cr pl...

Pattern Photoresist Silicon Silicon Nitride Silicon Photoresist Silicon Nitride Silicon Etch Nitride Remove Photoresist

In this proposal we seek to establish a porous silicon based etching process in the WTC microfabrication laboratory. The new process will allow us to etch high aspect ratio holes through a wafer. Holes like these are important for decreasing the dead volume of connections between micro and macro systems and for increasing the complexity of micro-fluidic systems. At the present time, the minimum...

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

Gallium nitride (GaN) nanostructures were successfully synthesized by the nitridation of the electrochemically deposited gallium oxide (Ga2O3) through the utilization of a so-called ammoniating process. Ga2O3 nanostructures were firstly deposited on Si substrate by a simple two-terminal electrochemical technique at a constant current density of 0.15 A/cm(2) using a mixture of Ga2O3, HCl, NH4OH ...

Silicon Nitride and Silicon Carbide